T. Yaoi et al., DEPENDENCE OF MAGNETORESISTANCE ON TEMPERATURE AND APPLIED VOLTAGE INA 82NI-FE AL-AL2O3/CO TUNNELING JUNCTION/, Journal of magnetism and magnetic materials, 126(1-3), 1993, pp. 430-432
The dependence of magnetoresistance on temperature T and on the applie
d voltage V in a 82Ni-Fe/Al-Al2O3/Co tunneling junction has been studi
ed. The magnetoresistance DELTAR/R increased rapidly at T less-than-or
-equal-to 30 K and V less-than-or-equal-to 2.5 mV. The result is discu
ssed by taking into account the tunneling conductance due to ferromagn
etic tunneling and nonferromagnetic tunneling causing the zero-bias an
omaly.