DEPENDENCE OF MAGNETORESISTANCE ON TEMPERATURE AND APPLIED VOLTAGE INA 82NI-FE AL-AL2O3/CO TUNNELING JUNCTION/

Authors
YAOI T ISHIO S MIYAZAKI T
Citation
T. Yaoi et al., DEPENDENCE OF MAGNETORESISTANCE ON TEMPERATURE AND APPLIED VOLTAGE INA 82NI-FE AL-AL2O3/CO TUNNELING JUNCTION/, Journal of magnetism and magnetic materials, 126(1-3), 1993, pp. 430-432
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Journal of magnetism and magnetic materials → ACNP
ISSN journal
03048853
Volume
126
Issue
1-3
Year of publication
1993
Pages
430 - 432
Database
ISI
SICI code
0304-8853(1993)126:1-3<430:DOMOTA>2.0.ZU;2-3
Abstract
The dependence of magnetoresistance on temperature T and on the applie d voltage V in a 82Ni-Fe/Al-Al2O3/Co tunneling junction has been studi ed. The magnetoresistance DELTAR/R increased rapidly at T less-than-or -equal-to 30 K and V less-than-or-equal-to 2.5 mV. The result is discu ssed by taking into account the tunneling conductance due to ferromagn etic tunneling and nonferromagnetic tunneling causing the zero-bias an omaly.