The modeling of spectroscopic ellipsometry data is reviewed, and is di
vided into three phases. The first phase involves the calculation of t
he Fresnel reflection coefficients for a given layer structure; it is
shown that the Abeles formalism provides the most flexibility, and can
be readily related. to the Berreman formalism for calculations involv
ing anisotropic layers. The second phase is to parameterize the optica
l functions of each individual layer; several models are reviewed, inc
luding effective media, the Lorentz oscillator and a recent parameteri
zation of amorphous semiconductors. The final phase involves the fitti
ng of the spectroscopic ellipsometry data to the model, where differen
t figures of merit of the fitting function are discussed. A proper num
erical analysis technique requires that the reduced chi2 be used as th
e figure of merit, which will result in the proper weighting of data p
oints, and in obtaining meaningful error limits and a measure of the g
oodness of fit.