EXTENDED PHOTOEMISSION FINE-STRUCTURE ANALYSIS OF THE SI(111)-(7X7) SURFACE CORE LEVELS

Authors
CARLISLE JA SIEGER MT MILLER T CHIANG TC
Citation
Ja. Carlisle et al., EXTENDED PHOTOEMISSION FINE-STRUCTURE ANALYSIS OF THE SI(111)-(7X7) SURFACE CORE LEVELS, Physical review letters, 71(18), 1993, pp. 2955-2958
Citations number
30
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
18
Year of publication
1993
Pages
2955 - 2958
Database
ISI
SICI code
0031-9007(1993)71:18<2955:EPFAOT>2.0.ZU;2-K
Abstract
The surface- and bulk-derived components of the Si 2p core levels, acq uired by photoemission from Si(111)-(7 x 7), show strong and different oscillations caused by extended fine structure above the 2p edge. An analysis of these oscillations yields the bulk and surface bond length s which agree well with the known structure. The heretofore controvers ial issues of the photoemission escape depth and the atomic origin of the surface core levels are resolved.