QUANTUM TRANSMITTANCE FROM LOW-TEMPERATURE BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY OF AU SI(100) SCHOTTKY INTERFACES/

Authors
HENDERSON GN FIRST PN GAYLORD TK GLYTSIS EN
Citation
Gn. Henderson et al., QUANTUM TRANSMITTANCE FROM LOW-TEMPERATURE BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY OF AU SI(100) SCHOTTKY INTERFACES/, Physical review letters, 71(18), 1993, pp. 2999-3002
Citations number
20
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
18
Year of publication
1993
Pages
2999 - 3002
Database
ISI
SICI code
0031-9007(1993)71:18<2999:QTFLB>2.0.ZU;2-M
Abstract
Ballistic electron emission microscopy studies of the Au/Si(100) inter face have been performed at temperatures below 77 K for the first time . Spectra below 10 K show collector charging due to the high semicondu ctor resistivity. Results above 10 K demonstrate unambiguously that bo th quantum-mechanical phase and amplitude effects are required to desc ribe electron transmission across a metal-semiconductor interface. Fur thermore, the ballistic (collisionless) model of electron transmission across this interface is shown to be valid for a wide energy range.