SCHOTTKY-BARRIER HEIGHTS OF W ON SI1-XGEX ALLOYS

Authors
AUBRY V MEYER F WARREN P DUTARTRE D
Citation
V. Aubry et al., SCHOTTKY-BARRIER HEIGHTS OF W ON SI1-XGEX ALLOYS, Applied physics letters, 63(18), 1993, pp. 2520-2522
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
18
Year of publication
1993
Pages
2520 - 2522
Database
ISI
SICI code
0003-6951(1993)63:18<2520:SHOWOS>2.0.ZU;2-2
Abstract
The Schottky barrier height of W on p-type Si1-xGex/Si has been invest igated as a function of composition (10% less-than-or-equal-to x less- than-or-equal-to 33%) and Si1-xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows t he rate of strain relaxation. These results suggest that the Fermi lev el at the interface is pinned relative to the conduction band.