TUNNELING SPECTROSCOPY OF MIDGAP STATES INDUCED BY ARSENIC PRECIPITATES IN LOW-TEMPERATURE-GROWN GAAS

Authors
FEENSTRA RM VATERLAUS A WOODALL JM PETTIT GD
Citation
Rm. Feenstra et al., TUNNELING SPECTROSCOPY OF MIDGAP STATES INDUCED BY ARSENIC PRECIPITATES IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 63(18), 1993, pp. 2528-2530
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
18
Year of publication
1993
Pages
2528 - 2530
Database
ISI
SICI code
0003-6951(1993)63:18<2528:TSOMSI>2.0.ZU;2-G
Abstract
The scanning tunneling microscope is used to study arsenic precipitate s in low-temperature-grown and annealed GaAs. Tunneling spectroscopy r eveals a distribution of states throughout the band pp, arising from t he precipitates, with the density of midgap states increasing as the p recipitate size increases. The Fermi level is found to be pinned at E( V)+0.65 eV for 600-degrees-C annealed material. For 800-degrees-C anne aled material the Fermi level is located at E(V)+1.05 eV in regions fa r from precipitates, and additional depletion regions are observed nea r the precipitates.