PHOTOLUMINESCENCE OF HYDROGENATED GAAS ALGAAS QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

The incorporation of hydrogen into an undoped GaAs/Al0.3Ga0.7As quantu m well (QW) structure (containing wells of varying thickness) grown by metalorganic vapor phase epitaxy has been studied by photoluminescenc e (PL) in the temperature range 12-200 K. Hydrogenation is shown to re duce the PL linewidths. This is attributed to a passivation of impurit ies in the wells and heterointerfaces. In addition, the influence of h ydrogenation on the radiative efficiency of each QW as a function of t emperature is discussed in terms of a passivation of grown-in defects as well as a depth distribution of plasma-induced defects.