FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES

Citation
Cb. Eom et al., FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES, Applied physics letters, 63(18), 1993, pp. 2570-2572
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
18
Year of publication
1993
Pages
2570 - 2572
Database
ISI
SICI code
0003-6951(1993)63:18<2570:FAPOEF>2.0.ZU;2-J
Abstract
Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructu res have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffe r layer. The structures have been grown in situ by 90-degrees off-axis sputtering, which allows the growth of uniform stoichiometric films o ver large areas with excellent step coverage. X-ray diffraction, Ruthe rford backscattering spectroscopy, and cross-sectional transmission el ectron microscopy reveal high crystalline quality and coherent interfa ces. They exhibit superior fatigue characteristics over those made wit h metal el showing little degradation over 10(10) cycles, with a large remnant polarization.