Cb. Eom et al., FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES, Applied physics letters, 63(18), 1993, pp. 2570-2572
Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructu
res have been fabricated employing isotropic metallic oxide electrodes
on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffe
r layer. The structures have been grown in situ by 90-degrees off-axis
sputtering, which allows the growth of uniform stoichiometric films o
ver large areas with excellent step coverage. X-ray diffraction, Ruthe
rford backscattering spectroscopy, and cross-sectional transmission el
ectron microscopy reveal high crystalline quality and coherent interfa
ces. They exhibit superior fatigue characteristics over those made wit
h metal el showing little degradation over 10(10) cycles, with a large
remnant polarization.