TOP-OXIDATION EFFECTS ON THE RELIABILITY OF OXIDE-NITRIDE-OXIDE STACKED FILM

Effects of top-oxidation on the reliability of oxide/nitride/oxide (ON O) stacked films have been investigated for different oxidation method s. The leakage current electric field acceleration factor (beta) of me an time to failure, and reliability of ONO stacked films are strongly affected by the top-oxide thickness and the oxidation methods. The opt imum top-oxide thickness on the nitride film is 2 to 3 nm. Leakage cur rent and beta are improved by dry/TCA (1,1,1-trichloroethane) top-oxid ation instead of dry oxidation. By using dry/TCA top-oxidation, high b eta, low- leakage current low defect density, and highly reliable ONO stacked films can be obtained.