PROPERTIES OF CADMIUM SELENIDE THIN-FILMS AS A FUNCTION OF LATERAL DISTANCE FROM CHROMIUM CONTACTS

The electrical, structural, and compositional properties of CdSe thin films were examined as a function of lateral distance from Cr contacts . The local threshold voltage of CdSe transistor channels was large an d negative near the contacts and eventually approached a maximum posit ive value. This result is consistent with heavy n-type doping of the C dSe caused by lateral diffusion of chromium contact metal. Energy-disp ersive x-ray analysis (EDAX) showed that chromium had diffused into th e CdSe film up to a distance of 20 mum from the contacts. For films an nealed with a maximum temperature of 370-degrees-C, the grain size was uniform across the channel. Samples annealed at 400-degrees-C for 4 h had an enhanced grain size near the contacts.