ELECTRON-STATES AT POINT-DEFECTS IN NONUNIFORM SEMICONDUCTOR ALLOYS

The broadening and shift of the electron localized states in non-unifo rm semiconductor alloys are studied in the effective-mass approximatio n. The calculation of the density of states is carried out for the cas e of short-range and long-range (in comparison with the localized-stat e radius) inhomogeneities of the alloy composition. The path-integral method is used. The shape of the broadened peak of the density of loca lized states in the short-range case is Lorentz-like; however, in the case of long-range inhomogeneities it is Gaussian. The results for bot h cases are discussed, and compared with the experimental data.