MICRO-RAMAN STUDY OF ION-IRRADIATED OXIDIZED SILICON SURFACES

Micro-Raman studies were performed on ion-irradiated oxidized silicon surfaces with different ion energies, ion fluences and subsequent hydr ogenation to determine the efficacy and sensitivity for obtaining info rmation on the degree of ion beam-induced damage in very thin (ca. 100 angstrom) layers of silicon subsurface and the top oxide. The variati ons in the Raman spectra were interpreted in terms of the degree of am orphization produced in the silicon sub-surface by the ion beam and de polymerization of the top SiO2 layer.