THE KINETICS OF PHOTOCONDUCTIVITY DECAY IN OSMIUM-DOPED SILICON

Investigations of the kinetics of the photoconductivity and photocapac itance decay were used to determine the parameters of the levels forme d as a result of introduction of osmium into n-type Si. Two acceptor l evels [E(c)-0.18 eV and E(c)-(0.53-0.56) eV] in n-type Si:Os, as well as donor (E(v)+0.18 eV) and acceptor [E(c)-(0.53+0.56) eV] levels in p -type Si:Os were identified. The carrier-capture cross sections of the levels were determined. It was concluded that the levels were due to complexes of osmium and an initially present impurity (boron or phosph orus).