EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON

Authors
VERBITSKAYA EM EREMIN VE IVANOV AM STROKAN NB
Citation
Em. Verbitskaya et al., EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON, Semiconductors, 27(7), 1993, pp. 612-616
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
7
Year of publication
1993
Pages
612 - 616
Database
ISI
SICI code
1063-7826(1993)27:7<612:EODIOR>2.0.ZU;2-6
Abstract
Radiation defects formed by deuterons in radiation detectors made of h igh-resistivity n-type Si have been studied. The effects of deuteron a nd alpha-particle irradiation were compared. The results indicate that annealing can reduce the reverse current in the irradiated detectors. The observed effects were explained by the presence of large multicom ponent complexes.