OSCILLATIONS OF THE MAGNETORESISTANCE IN STRESSED GE GE1-XSIX SUPERLATTICES SUBJECTED TO A TILTED MAGNETIC-FIELD/

Authors
ARAPOV YG GORODILOV NA KUZNETSOV OA NEVEROV VN ORLOV LK RUBTSOVA RA KHARUS GI CHERNOV AL SHELUSHININA NG SHTRAPENIN GL
Citation
Yg. Arapov et al., OSCILLATIONS OF THE MAGNETORESISTANCE IN STRESSED GE GE1-XSIX SUPERLATTICES SUBJECTED TO A TILTED MAGNETIC-FIELD/, Semiconductors, 27(7), 1993, pp. 642-647
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
7
Year of publication
1993
Pages
642 - 647
Database
ISI
SICI code
1063-7826(1993)27:7<642:OOTMIS>2.0.ZU;2-#
Abstract
The angular dependence of the oscillatory magnetoresistance pattern ex hibited by stressed multilayer Ge/Ge1-xSix heterostructures in a tilte d magnetic field has been studied. In the spin splitting region the os cillation pattern depends strongly on the degree to which the conducti ng layers of a heterostructure are stressed. The observed effects are a consequence of the complex form of the hole spectrum in the valence band of Ge, which is described by the Luttinger Hamiltonian.