PHOTOLUMINESCENCE OF A DEGENERATE ELECTRON-GAS IN GAAS-SI FILMS GROWNBY THE METHOD OF MOLECULAR-BEAM EPITAXY

Authors
ABRAMOV AP ABRAMOVA IN VERBIN SY GERLOVIN IY GRIGOREV SR IGNATEV IV KARIMOV OZ NOVIKOV AB NOVIKOV BN
Citation
Ap. Abramov et al., PHOTOLUMINESCENCE OF A DEGENERATE ELECTRON-GAS IN GAAS-SI FILMS GROWNBY THE METHOD OF MOLECULAR-BEAM EPITAXY, Semiconductors, 27(7), 1993, pp. 647-649
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
7
Year of publication
1993
Pages
647 - 649
Database
ISI
SICI code
1063-7826(1993)27:7<647:POADEI>2.0.ZU;2-#
Abstract
The photoluminescence spectra of Si-doped epitaxial GaAs films with a wide range of free carrier densities 10(16)-7.8X10(18) cm-3 were studi ed at T=4.2 K. The observed asymmetric luminescence band is attributed to the recombination of a degenerate electron ps with localized photo holes. The properties of the electron gas in such heavily doped epitax ial GaAs films were found to be governed not so much by the nature of the dopant as by the conditions during growth.