PHOTOLUMINESCENCE EMITTED BY A QUANTUM-WELL WITH A HIGH PHOTOCARRIER DENSITY

Citation
Vy. Aleshkin et al., PHOTOLUMINESCENCE EMITTED BY A QUANTUM-WELL WITH A HIGH PHOTOCARRIER DENSITY, Semiconductors, 27(7), 1993, pp. 655-657
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
7
Year of publication
1993
Pages
655 - 657
Database
ISI
SICI code
1063-7826(1993)27:7<655:PEBAQW>2.0.ZU;2-J
Abstract
A study was made of the photoluminescence emitted by a heterostructure with a single quantum well in the GaAs-In0.15Ga0.85As system at high excitation rates (up to 10(6) W/cm2) and high photocarrier densities ( approximately 10(14) cm-2). Occupancy of quantum well states by photoc arriers under these conditions gave rise to singularities in the photo luminescence spectrum at energies corresponding to optical transitions between several quantum-size subbands.