INFLUENCE OF DEEP LEVELS ON THE FIELD EFFECTS IN HOMOGENEOUS SILICON-BASED PERIODIC SEMICONDUCTOR STRUCTURES

Citation
Ev. Vladimirova et al., INFLUENCE OF DEEP LEVELS ON THE FIELD EFFECTS IN HOMOGENEOUS SILICON-BASED PERIODIC SEMICONDUCTOR STRUCTURES, Semiconductors, 27(7), 1993, pp. 680-681
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
7
Year of publication
1993
Pages
680 - 681
Database
ISI
SICI code
1063-7826(1993)27:7<680:IODLOT>2.0.ZU;2-5