HIGH-QUALITY HGCDTE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD) WITH MULTINOZZLES

A multinozzle MOCVD technique for growing compositionally uniform Hg1- xCdxTe was developed. Using a computer simulation, we clarified that t he total profile produced with 8 nozzles was a summation of the nozzle s' individual profiles. By adjusting each nozzles' Cd source concentra tion, a high-quality Hg1-xCdxTe epilayer with a composition variation (DELTAx) of 0.002 at xBAR = 0.264 was obtained. We used arsenic (As) a s a p-type dopant and iodine (I) as a n-type dopant. The maximum carri er concentration of As-doped layers was 7 X 10(16) cm-3, and that of I -doped layers was 4 X 10(18) cm-3. These results demonstrate that an a brupt p-n junction suitable for high-performance devices was produced.