BATIO3 FILMS FOR SILICON-ON-INSULATOR STRUCTURE

The physical properties of BaTio3 films deposited onto (100)-oriented silicon wafers at a low substrate temperature of 350-degrees-C for fab ricating silicon-on-insulator (SOI) structures are described. These fi lms were prepared by rf planar magnetron sputtering using a target of BaTiO3 ceramic. These films did not exhibit, ferroelectricity, and the dielectric constant epsilon(s) and the dissipation factor tan delta w ere about 100 and 0.013, respectively. These films showed a breakdown field larger than 1 X 10(6) V/cm and were excellent insulators. Thin-f ilm transistors were fabricated using a silicon film deposited onto th e BaTiO3 film. The field effect mobility of 34 cm2/Vs was obtained.