In order to realize nickel electrode multilayer ceramic capacitors wit
h high capacitance per volume, the holmium-doped (Ba, Ca, Mg)(Ti, Zr)O
3 system was studied. In the case of maintaining an oxidizing atmosphe
re at the cooling stage, the resistivities of the dielectric materials
were easily recovered by doping with Ho. The newly developed dielectr
ic material exhibited high dielectric constant (18,000) and high resis
tivity (>10(-12) OMEGA cm). Using the dielectrics, nickel electrode mu
ltilayer ceramic capacitors with high specific capacitance (Y5V 4.7 mu
F in EIA 1206 size) were developed. They showed highly reliable charac
teristics.