LOW-TEMPERATURE IN-SITU PREPARATION OF FERROELECTRIC PB(ZR0.55TI0.45)O3 THIN-FILMS BY REACTIVE SPUTTERING

Authors
LI XJ LIU JS ZENG YK LIANG JW
Citation
Xj. Li et al., LOW-TEMPERATURE IN-SITU PREPARATION OF FERROELECTRIC PB(ZR0.55TI0.45)O3 THIN-FILMS BY REACTIVE SPUTTERING, Applied physics letters, 63(17), 1993, pp. 2345-2347
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2345 - 2347
Database
ISI
SICI code
0003-6951(1993)63:17<2345:LIPOFP>2.0.ZU;2-4
Abstract
Ferroelectric thin films with a composition Pb(Zr0.55Ti0.45)O3 have be en prepared on Pt-coated Si substrates by a reactive sputtering techni que at substrate temperatures as low as 250-degrees-C. By means of x-r ay diffraction, titanium zirconium oxide was identified as one of the reaction products. Based on this fact, a possible Pb(Zr,Ti)O3 formatio n mechanism has been proposed. X-ray diffraction patterns of these fil ms show nearly no pyrochlore phase. Ferroelectric hysteresis loops sho w a remanent polarization of 25.6 muC/cm2 and a coercive field of 17.1 kV/cm.