A theoretical study is presented of the effect of misfit strain on the
transition from step flow to island nucleation dominated epitaxial la
yer growth on a vicinal surface. The analysis generalizes a set of rea
ction-diffusion equations used for homoepitaxy to include the fact tha
t heteroepitaxial strain changes the Arrhenius barrier for diffusion a
nd promotes the detachment of atoms from the edge of strained terraces
and islands. The first effect is equivalent to changing the depositio
n flux; the latter can drive the system into a new layer growth mode c
haracterized by moving steps that engulf very many very small islands.
Experiments to test these predictions are suggested.