STEP-FLOW GROWTH ON STRAINED SURFACES

Citation
C. Ratsch et A. Zangwill, STEP-FLOW GROWTH ON STRAINED SURFACES, Applied physics letters, 63(17), 1993, pp. 2348-2350
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2348 - 2350
Database
ISI
SICI code
0003-6951(1993)63:17<2348:SGOSS>2.0.ZU;2-#
Abstract
A theoretical study is presented of the effect of misfit strain on the transition from step flow to island nucleation dominated epitaxial la yer growth on a vicinal surface. The analysis generalizes a set of rea ction-diffusion equations used for homoepitaxy to include the fact tha t heteroepitaxial strain changes the Arrhenius barrier for diffusion a nd promotes the detachment of atoms from the edge of strained terraces and islands. The first effect is equivalent to changing the depositio n flux; the latter can drive the system into a new layer growth mode c haracterized by moving steps that engulf very many very small islands. Experiments to test these predictions are suggested.