CAN ELECTRICAL DEACTIVATION OF HIGHLY SI-DOPED GAAS BE EXPLAINED BY AUTOCOMPENSATION

Authors
SCHUPPLER S ADLER DL PFEIFFER LN WEST KW CHABAN EE CITRIN PH
Citation
S. Schuppler et al., CAN ELECTRICAL DEACTIVATION OF HIGHLY SI-DOPED GAAS BE EXPLAINED BY AUTOCOMPENSATION, Applied physics letters, 63(17), 1993, pp. 2357-2359
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2357 - 2359
Database
ISI
SICI code
0003-6951(1993)63:17<2357:CEDOHS>2.0.ZU;2-L
Abstract
Using near-edge x-ray absorption fine structure, the first experimenta l determination of Si atom concentrations occupying As sites in Si-dop ed GaAs (100) is reported. The measurements reveal that at high doping levels (greater than or similar to 10(19) cm-3) in molecular-beam-epi taxy-grown samples, the number of such p-type Si atoms is insufficient to account for the observed large reduction of free-carriers.