X-RAY PHOTOEMISSION CHARACTERIZATION OF THIN EPITAXIAL FE SILICIDE PHASES ON SI(111)

Authors
KAFADER U WETZEL P PIRRI C GEWINNER G
Citation
U. Kafader et al., X-RAY PHOTOEMISSION CHARACTERIZATION OF THIN EPITAXIAL FE SILICIDE PHASES ON SI(111), Applied physics letters, 63(17), 1993, pp. 2360-2362
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2360 - 2362
Database
ISI
SICI code
0003-6951(1993)63:17<2360:XPCOTE>2.0.ZU;2-2
Abstract
Depending on preparation conditions, Fe silicides grown on Si (111) by means of solid phase epitaxy and molecular beam epitaxy show the form ation of the bulk epsilon-FeSi and beta-FeSi2 phases as well as epitax ially grown metastable CsCl- and CaF2-type Fe silicides. The valence-b and of these Fe silicides are measured with monochromatized Al Kalpha x-ray photoemission and angle resolved ultraviolet photoemission and a re found to be in remarkable agreement with calculated densities of st ates.