REALIZATION OF NEARLY 2-DIMENSIONAL GROWTH MODE FOR ALP ON SI(100) SUBSTRATE BY A LOW-TEMPERATURE MIGRATION-ENHANCED EPITAXY

Authors
MARUYAMA H PAK K SAKAKIBARA K YONEZU H
Citation
H. Maruyama et al., REALIZATION OF NEARLY 2-DIMENSIONAL GROWTH MODE FOR ALP ON SI(100) SUBSTRATE BY A LOW-TEMPERATURE MIGRATION-ENHANCED EPITAXY, Applied physics letters, 63(17), 1993, pp. 2375-2377
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2375 - 2377
Database
ISI
SICI code
0003-6951(1993)63:17<2375:RON2GM>2.0.ZU;2-A
Abstract
AlP layers were successfully grown on Si(100) substrates with a nearly two-dimensional growth mode using a low temperature migration enhance d epitaxy. The reflection high-energy electron diffraction intensity o scillations were observed at the initial growth stage although a three -dimensional mode occurred at all times in the molecular beam epitaxy growth. The Auger electron spectroscopy measurement also showed that t he nearly two-dimensional growth mode proceeded from the start of the AlP growth.