IMPURITY LEVELS IN HETEROSTRUCTURES FOR OPTICAL-ABSORPTION AND EMISSION

Authors
PARIHAR SR LYON SA
Citation
Sr. Parihar et Sa. Lyon, IMPURITY LEVELS IN HETEROSTRUCTURES FOR OPTICAL-ABSORPTION AND EMISSION, Applied physics letters, 63(17), 1993, pp. 2396-2398
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2396 - 2398
Database
ISI
SICI code
0003-6951(1993)63:17<2396:ILIHFO>2.0.ZU;2-D
Abstract
We present calculations showing the effect of placing impurities in qu antum wells and heterostructure barriers. With a suitable configuratio n of the band edge, both the spacing of energy levels and their orderi ng can be controlled. The results should be of use in designing more f lexible impurity infrared detectors and enhancing the radiative effici ency of transitions between impurity levels.