RAMAN-STUDY OF AL0.54IN0.46P GAAS INTERFACES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/

An Al0.54In0.46P/GaAs superlattice was grown using a new approach to m olecular beam epitaxy that employs solid-source valved crackers to sup ply the As4 and P2 group V fluxes. The superlattice sample was charact erized by off-resonance Raman backscattering spectroscopy. In comparis on to other III-V superlattices, the acoustic region of the Raman spec trum from this superlattice was especially rich, and phonon doublets u p to the seventh order were visible in the spectrum. The interface rou ghness in the superlattice was determined to be two monolayers using a simple photoelastic model to characterize the intensities of the fold ed longitudinal-acoustic phonon peaks. The minimal intermixing present at the interfaces demonstrates the ability to abruptly switch between group V fluxes using the solid-source valved crackers.