QUANTUM EFFICIENCIES EXCEEDING UNITY DUE TO IMPACT IONIZATION IN SILICON SOLAR-CELLS

Authors
KOLODINSKI S WERNER JH WITTCHEN T QUEISSER HJ
Citation
S. Kolodinski et al., QUANTUM EFFICIENCIES EXCEEDING UNITY DUE TO IMPACT IONIZATION IN SILICON SOLAR-CELLS, Applied physics letters, 63(17), 1993, pp. 2405-2407
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
17
Year of publication
1993
Pages
2405 - 2407
Database
ISI
SICI code
0003-6951(1993)63:17<2405:QEEUDT>2.0.ZU;2-5
Abstract
Absolute measurements demonstrate internal quantum efficiencies in sil icon solar cells to exceed unity for photon energies above the first d irect band gap and to show distinct spectral features that correspond to specific points in the Brillouin zone. Ultraviolet radiation can ge nerate hot carriers with sufficient energy to cause impact ionization which results in two electron hole pairs per incident photon.