Bn. Murdin et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF DEEP CENTERS IN MOLECULAR-BEAM EPITAXY ZNSE-N, Applied physics letters, 63(17), 1993, pp. 2411-2413
Optically detected magnetic resonance has been used to investigate the
deep level recombination processes in p-type ZnSe grown by molecular
beam epitaxy and doped with nitrogen. In addition to the well-known sh
allow donor resonance at g = 1.11, an anisotropic deep donor resonance
is observed with g = 1.38 and a deep acceptor resonance is detected a
t g = 2. These results are consistent with the pair recombination proc
esses proposed by us previously where the compensating deep donor was
assigned to the V(Se)-Zn-N(Se) complex.