TRANSPORT PHENOMENA IN SPACED DOPED GAAS ALXGA1-XAS SUPERLATTICES/

Authors
KADUSHKIN VI SHANGINA EL
Citation
Vi. Kadushkin et El. Shangina, TRANSPORT PHENOMENA IN SPACED DOPED GAAS ALXGA1-XAS SUPERLATTICES/, Semiconductors, 27(8), 1993, pp. 725-729
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
8
Year of publication
1993
Pages
725 - 729
Database
ISI
SICI code
1063-7826(1993)27:8<725:TPISDG>2.0.ZU;2-Q
Abstract
An experimental study was made of the temperature dependences of the e lectrical conductivity sigma(T) and of the dependences of the current at 4.2 K on a longitudinal electric field E applied to so-called space d superlattices, i.e., sets of quantum wells with a two-dimensional el ectron gas in GaAs, separated by Al0.3Ga0.7As barriers.