RECOMBINATION MECHANISMS AND TRANSPORT PHENOMENA IN UNIAXIALLY COMPRESSED CDXHG1-XTE

The recombination mechanisms and transport phenomena manifested during the transformation of the energy band structure of a narrow-gap semic onductor CdxHg1-xTe (x almost-equal-to 0.20-0.30) by uniaxial elastic deformation have been studied. In addition to major changes in the Hal l coefficient, electrical resistivity, and field dependences of the ma gnetoresistance and photomagnetic effect, which occurs as a result of the splitting of the valence band and a reduction in the effective mas s of holes in an elastically stressed crystal, there are also changes in the rates of interband and impurity recombination. In particular, t he rate of interband radiative recombination increases, while the rate of impact recombination decreases with increasing deformation (strain ). In the case of impurity recombination, which involves the participa tion of shallow acceptors, the rate of recombination increases because of the decrease in the rate at which the minority carriers are captur ed by an acceptor state.