POLARIZATION DEPENDENCE OF THE INTERBAND OPTICAL-ABSORPTION BY AN INGAAS QUANTUM-WELL IN GAAS

The interband optical absorption in an In0.3Ga0.7As quantum well in Ga As has been studied. The measurements were made employing the s and p linear polarizations of light and the total internal reflection geomet ry. The experimental values of the absorption coefficient beta of the well are in satisfactory agreement with the theoretical predictions. W hen the angle of incidence on the quantum well plane was 45-degrees, t he ratio of the absorption coefficients for the two polarizations was beta(s)/beta(p) almost-equal-to 2 at the absorption edge. A polarizati on dependence of the spectra of the capacitor photo-emf was observed i n the region of absorption by the quantum well.