THE APPLICABILITY OF IMPLANTED ALPHA-SOURCES TO THICKNESS AND STOICHIOMETRY MEASUREMENTS OF THIN-FILMS

A method for determining both the thickness and the average stoichiome try of thin films is presented. The method is based on implanting radi oactive alpha-sources in the substrate prior to layer growth and measu ring the energy loss of the alpha-particles as they traverse the layer , Information about the stoichiometry is obtained through the comparis on of the energy loss of alpha-particles of different initial energies . Experimental examples for the utilization of this method are present ed, in which Sb was grown on Si substrates, GaAs, InAs and AlAs on GaA s and YBCO on YSZ. The experimental precision which can be expected us ing the method is discussed, together with specific scenarios in which it could be advantageously applied.