GRAIN INTERACTION EFFECT IN ELECTRONIC-PROPERTIES OF SILICON NANOSIZEFILMS

Authors
FILONOV AB KHOLOD AN NOVIKOV VA BORISENKO VE VERVOORT L BASSANI F SAUL A DAVITAYA FA
Citation
Ab. Filonov et al., GRAIN INTERACTION EFFECT IN ELECTRONIC-PROPERTIES OF SILICON NANOSIZEFILMS, Applied physics letters, 70(6), 1997, pp. 744-746
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
6
Year of publication
1997
Pages
744 - 746
Database
ISI
SICI code
0003-6951(1997)70:6<744:GIEIEO>2.0.ZU;2-E
Abstract
Electronic properties of both nanometer thickness (111) monocrystallin e and nanocrystalline free standing silicon films were calculated with in a self-consistent linear combination of atomic orbitals method. Gra ined nature of the nanocrystalline films is found to induce both a dir ect band gap and its reduction (down to about 2 eV) with respect to an isolated grain of same size. (C) 1997 American Institute of physics.