PASSIVATION OF GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY S2CL2 SOLUTION/

Authors
CAO XA HOU XY CHEN XY LI ZS SU RZ DING XM WANG X
Citation
Xa. Cao et al., PASSIVATION OF GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY S2CL2 SOLUTION/, Applied physics letters, 70(6), 1997, pp. 747-749
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
6
Year of publication
1997
Pages
747 - 749
Database
ISI
SICI code
0003-6951(1997)70:6<747:POGAHB>2.0.ZU;2-5
Abstract
The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs heterojunction bipolar transistors. It is shown that the de characteri stics of the transistor could be improved significantly and the passiv ation effect is not subject to degradation by heating to 150 degrees C in atmospheric air and immersing in water. A real-time monitoring tec hnique is proposed which provides good control of the passivation stop ping point. (C) 1997 American Institute of Physics.