CARRIER TRANSPORT IN ORDERED AND DISORDERED IN0.53GA0.47AS

Authors
AHRENKIEL RK AHRENKIEL SP ARENT DJ OLSON JM
Citation
Rk. Ahrenkiel et al., CARRIER TRANSPORT IN ORDERED AND DISORDERED IN0.53GA0.47AS, Applied physics letters, 70(6), 1997, pp. 756-758
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
6
Year of publication
1997
Pages
756 - 758
Database
ISI
SICI code
0003-6951(1997)70:6<756:CTIOAD>2.0.ZU;2-W
Abstract
Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In0.53Ga0.97As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show th at pulsed yttrium-aluminum-garnet laser-induced excess carriers in dis ordered films decay by conventional mechanisms such as the Shockley-Re ad-Hall effect. In highly ordered ternaries, recombination of excess c arriers is retarded by some mechanisms such as charge separation. Exce ss carrier lifetimes exceeding several hundred microseconds have been observed. (C) 1997 American Institute of Physics.