FERMI-LEVEL PINNING POSITION AT THE AU-INAS INTERFACE DETERMINED USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY

Authors
BHARGAVA S BLANK HR NARAYANAMURTI V KROEMER H
Citation
S. Bhargava et al., FERMI-LEVEL PINNING POSITION AT THE AU-INAS INTERFACE DETERMINED USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Applied physics letters, 70(6), 1997, pp. 759-761
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
6
Year of publication
1997
Pages
759 - 761
Database
ISI
SICI code
0003-6951(1997)70:6<759:FPPATA>2.0.ZU;2-Q
Abstract
Ballistic electron emission microscopy (BEEM) has been used to determi ne the Fermi-level pinning position at the Au/InAs interface. Using BE EM's three-terminal capabilities, collector current-voltage scans were taken on Au/InAs/AlSb samples. The extracted BEEM threshold values (1 .22 eV) correspond to the highest energy band position in the conducti on band at the InAs/AlSb interface. By subtracting the InAs/AlSb condu ction-band offset (1.35 eV), an estimate of the Au Fermi-level positio n on InAs is obtained (0.13 eV). (C) 1997 American Institute of Physic s.