SELF-ORGANIZED SUPERLATTICE FORMATION IN II-IV AND III-V SEMICONDUCTORS

There is extensive recent experimental evidence of spontaneous superla ttice (SL) formation in various II-VI and III-V semiconductors. Here w e propose an atomistic mechanism responsible for SL formation, and der ive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet struc ture for deposition onto high symmetry surfaces, similar to that obser ved in InAsSb. (C) 1997 American Institute of Physics.