MICROSTRUCTURAL CHARACTERIZATION OF SOLID-PHASE CRYSTALLIZED AMORPHOUS-SILICON FILMS RECRYSTALLIZED USING AN EXCIMER-LASER

The laser recrystallization of amorphous-silicon films crystallized in a furnace is investigated for single and multipulse laser irradiation , The resulting microstructure is grouped into three regimes, based on their recrystallization mechanism. For the low energy irradiation reg ime, the grain size in unchanged, however many intragrain defects are removed, while the high energy regime results in homogeneous nucleatio n of the molten film. A third regime exists between these two, charact erized by large lateral grain growth. Except for the low energy regime , we conclude that the results obtained are consistent with those foun d for the direct laser crystallization of amorphous silicon films. (C) 1997 American Institute of Physics.