TRANSIENT PHOTOCURRENTS IN CDTE AND CDTE-O SPUTTERED FILMS

Citation
R. Ramirezbon et al., TRANSIENT PHOTOCURRENTS IN CDTE AND CDTE-O SPUTTERED FILMS, Solid state communications, 88(4), 1993, pp. 283-286
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
88
Issue
4
Year of publication
1993
Pages
283 - 286
Database
ISI
SICI code
0038-1098(1993)88:4<283:TPICAC>2.0.ZU;2-I
Abstract
Transient photocurrents between coplanar electrodes have been measured in CdTe polycrystalline films and CdTe:O amorphous films, using the t ime of flight technique. Both kinds of film were grown by the R.F. spu ttering technique. The transient photocurrents in the CdTe films have a power law behavior and show a great influence of trapping and recomb ination of charge A shoulder in the photocurrents measured at high tem peratures is observed in the CdTe:O films. The time position of this s houlder is independent of the bias voltage and thermally activated, wi th an activation energy of 0.69 eV. The photocurrent shape is explaine d by a suitable multiple trapping model.