INTERACTION BETWEEN THIN-FILMS OF ZINC AND (100) GAAS

Authors
KAMINSKA E PIOTROWSKA A ZARECKA R MIZERA E
Citation
E. Kaminska et al., INTERACTION BETWEEN THIN-FILMS OF ZINC AND (100) GAAS, Acta Physica Polonica. A, 84(3), 1993, pp. 527-529
Citations number
3
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
84
Issue
3
Year of publication
1993
Pages
527 - 529
Database
ISI
SICI code
0587-4246(1993)84:3<527:IBTOZA>2.0.ZU;2-A
Abstract
Interfacial reactions between thin films of Zn and GaAs were studied b y means of transmission electron microscopy. Low-temperature interacti on is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360-degrees-C the formation of Zn3As2 ph ase, highly oriented with respect to the (100) substrate takes place.