OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN ZNSE ON GAAS

Photoluminescence studies of molecular beam epitaxy grown ZnSe-on-GaAs layers are presented. The high sensitivity of the PL technique allowe d for identification unintentional dopants in pure ZnSe sample. Charac teristic photoluminescence lines due to extended defects were observed . The experimental results obtained show a correlation between intenti onal doping level and extended defects concentration. We conclude also that even though molecular beam epitaxy layers are grown at low tempe rature, the self-compensation mechanism may still be important. For he avily doped sample edge emission is deactivated likely due to efficien t energy transfer link with deep donor-acceptor pair bands.