Impurity-mediated free-carrier absorption was analyzed theoretically t
aking into account the possible spatial impurity correlations. The eff
ect of correlations was included via the structure factor S(q) obtaine
d from finite temperature Monte Carlo simulations of ordering in the i
mpurity system. From the comparison of the experimental data with the
results of calculations it is demonstrated that the ordering of charge
d centers exists for HgSe:Fe in a wide temperature range.