FIELD-IONIZATION OF SHALLOW ACCEPTORS

Authors
DARGYS A ZURAUSKAS S ZURAUSKIENE N
Citation
A. Dargys et al., FIELD-IONIZATION OF SHALLOW ACCEPTORS, Acta Physica Polonica. A, 84(4), 1993, pp. 629-632
Citations number
8
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
84
Issue
4
Year of publication
1993
Pages
629 - 632
Database
ISI
SICI code
0587-4246(1993)84:4<629:FOSA>2.0.ZU;2-4
Abstract
Experimental studies on hole tunneling from the substitutional boron i mpurity into degenerate valence band of silicon single crystals are pr esented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presenc e of random strains and electric field in the lattice.