ELECTRIC-FIELD STIMULATED-EMISSION OF ELECTRONS FROM DEEP TRAPS IN SIO2

Authors
STRZALKOWSKI I MARCZEWSKI M KOWALSKI M JASTRZEBSKI C
Citation
I. Strzalkowski et al., ELECTRIC-FIELD STIMULATED-EMISSION OF ELECTRONS FROM DEEP TRAPS IN SIO2, Acta Physica Polonica. A, 84(4), 1993, pp. 701-704
Citations number
5
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
84
Issue
4
Year of publication
1993
Pages
701 - 704
Database
ISI
SICI code
0587-4246(1993)84:4<701:ESOEFD>2.0.ZU;2-I
Abstract
An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO2 layers ha ve been studied using a new isochronal - EFSE - technique. A broad spe ctrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electro n trap-to-band tunneling emission in SiO2