PHOTOVOLTAIC EFFECT ON PBTE P-N-JUNCTION IN THE PRESENCE OF MAGNETIC-FIELD

Photovoltaic spectra of PbTe p-n junction have been measured in the in frared spectral region in the temperature range of 8-260 K. The p-n ju nctions have been formed by cadmium diffusion into the p-type PbTe cry stals. From the positions of the photovoltaic maxima the energy gap of the diode material has been determined. In the presence of a magnetic field up to 7 T, a pronounced oscillatory behavior of the photovoltag e was observed in the Faraday and Voigt configurations. Experiments we re performed as a function of the magnetic field intensity at a consta nt wavelength of the incident light. The energy of the interband magne tooptical transitions between the Landau levels in PbTe was determined and compared with the theoretical model of Adler, describing the ener gy band structure for the IV-VI compounds.