We report investigations of the Hall effect and conductivity of Te dop
ed AlxGa1-xAs (x = 0.3). After illumination at low temperature, the co
nductivity decreases in two steps on warming. These steps are explaine
d in terms of the two sets of energy levels associated with two types
of Te-DX centers depending on the neighboring host cation (Ga or Al) w
hich undergoes the lattice relaxation. The observed persistent increas
e in mobility is also explained in terms of the two different capture
barriers.