SHALLOW OHMIC CONTACT SYSTEM TO N-GAAS

Authors
KAMINSKA E PIOTROWSKA A PIOTROWSKI TT BARCZ A GUZIEWICZ M ADAMCZEWSKA J KWIATKOWSKI S
Citation
E. Kaminska et al., SHALLOW OHMIC CONTACT SYSTEM TO N-GAAS, Acta Physica Polonica. A, 84(4), 1993, pp. 804-806
Citations number
4
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
84
Issue
4
Year of publication
1993
Pages
804 - 806
Database
ISI
SICI code
0587-4246(1993)84:4<804:SOCSTN>2.0.ZU;2-C
Abstract
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morpholog y and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effec tive capping layer during the contact processing.