MOLECULAR-BEAM EPITAXY OF AL-CHI-GA1-CHI-SB AND AL-CHI-GA1-CHI-AS - NEW DONOR DOPING SOURCES

The first results obtained with the use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for molecular beam epitaxy of AlxGa1-xSb (0 less-than-or-equal-to x less-than-or-equal-to 1) and AlxGa1-xAs (0 less-than-or-equal-to x less-than-or-equal-to 0.4) are reported. In Ga As free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three ord ers of magnitude. For AlxGa1-xSb it,was possible to compensate the hig h concentration of native acceptors and to obtain n-type of conductivi ty.